DHG 5 I 600PA advanced Sonic-FRD Symbol Definition R a t i n g s Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Conditions Unittyp. max. IFSM IR A μA V 40 IFAV A VF 2.20 RthJC 3.15 K/W VR = 600 1 3 min. 5 =10ms (50 Hz), sine Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) VRRM V 600 10 TVJ = V 25 °C TVJ = 125 °C mA 1 Package: Part number VR = 600 TVJ = 25 °C IF =A5 V TC = 110 °C Ptot 40 W TC 25 °C = A IRM 2 -diF/dt = 100 A/μs IF =A;5 VR =V400 A t rr EAS tbd mJ =A;L = μHtbd 100 TVJ = 25 °C IAS IAR A VA = 1.5·VR typ.; tbd f = 10 kHz TVJ 150 °C -55 High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode VRRM = IFAV trr = = 600 V 5 A 35 ns TVJ =45°C DHG 5 I 600PA V tp max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current non-repetitive avalanche energy repetitive avalanche current reverse recovery time 2.98 TVJ = 25 °C CJ tbd pF junction capacitance VR =V;300 f = 1 MHz TVJ =°C25 VF0 V 1.31 TVJ = 150 °C rF 133 mΩ TO-220AC V 2.02 5 125TVJ =°C IF =A V 2.85 IF =A10 IF =A10 ns 35 ns ● Industry standard outline ● Epoxy meets UL 94V-0 ● RoHS compliant TVJ =25 °C TVJ = 125 °C TVJ =25 °C TVJ = 125 °C rectangular, d = 0.5 threshold voltage slope resistance for power loss calculation only Backside: cathode IXYS reserves the right to change limits, conditions and dimensions. ? 2006 IXYS all rights reserved 0629 * Data according to IEC 60747and per diode unless otherwise specified |
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